Vishay SI8445DB-T2-E1 MOSFET

Vgs(th): 0.85V

Vgs (Max): 5V

Gate Charge (Qg): 16nC

Power consumption: 1.8|11.4W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 9.8A

Input Capacitance (Ciss): 700pF

Operating temperature range: -55 to 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 84mOhm

Drive Voltage (Max Rds On, Min Rds On): 1.2|4.5V