Vishay SIHB12N50C-E3 MOSFET

Vgs(th): 5 V

Vgs (Max): 30V

Gate Charge (Qg): 48nC

Power consumption: 208W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 500V

Continuous drain current: 12A

Input Capacitance (Ciss): 1375pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 555mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V