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Vishay SIHB6N65E-GE3 N-沟道 650V

ModelSIHB6N65E-GE3
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No. of Pins: 3

Channel Type: N Channel

Product Range: E Series

Power Dissipation: 78

Transistor Mounting: Surface Mount

Transistor Case Style: TO-263AB

Drain Source Voltage Vds: 650

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 7

Drain Source On State Resistance: 600

Gate Source Threshold Voltage Max: 4

Datasheet


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