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Fall Time: 40.4 ns
Rise Time: 4.8 ns
Technology: SiC
Unit Weight: 1.600 g
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 13 nC
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 78 W
Vgs - Gate-Source Voltage: - 10 V, + 25 V
Typical Turn-On Delay Time: 4 ns
Typical Turn-Off Delay Time: 10.8 ns
Id - Continuous Drain Current: 5.3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 1 Ohms
Vds - Drain-Source Breakdown Voltage: 1.7 kV
Vgs th - Gate-Source Threshold Voltage: 3.1 V
