Wolfspeed C3M0160120J SiC MOSFETS 碳化硅 MOSFET，160毫欧，1200伏，TO-263-7，工业级

Fall Time: 8 ns

Rise Time: 8 ns

Technology: SiC

Unit Weight: 2.387 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 24 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 90 W

Vgs - Gate-Source Voltage: - 8 V, + 19 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 14 ns

Id - Continuous Drain Current: 17 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 5.2 S

Rds On - Drain-Source Resistance: 208 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.6 V