YAGEO XSemi XP6P250N MOSFETs P型 -60V -1.6A SOT-23S

Width: 2.9 mm

Height: 1.00 mm

Length: 2.4 mm

Fall Time: 3 ns

Rise Time: 5 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 5 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.25 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 17 ns

Id - Continuous Drain Current: 1.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3.8 S

Rds On - Drain-Source Resistance: 250 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 3 V