YAGEO XSemi XP70SL1K4AH MOSFET N沟道 700V 3.2A TO-252

Width: 6.50 mm

Height: 2.30 mm

Length: 9.43 mm

Fall Time: 14 ns

Rise Time: 7 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: N-Channel

Qg - Gate Charge: 10.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 22 ns

Id - Continuous Drain Current: 3.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2.4 S

Rds On - Drain-Source Resistance: 1.4 Ohms

Vds - Drain-Source Breakdown Voltage: 700 V

Vgs th - Gate-Source Threshold Voltage: 5 V