YAGEO XSemi XP8NA2R2CXT MOSFETs N-CH 80V 35A PMPAK-5x6X

Width: 5.2 mm

Height: 1.10 mm

Length: 6.15 mm

Fall Time: 63 ns

Rise Time: 60 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 112 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 24 ns

Typical Turn-Off Delay Time: 53 ns

Id - Continuous Drain Current: 168 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 70 S

Rds On - Drain-Source Resistance: 2.2 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 4 V