Transistor IGBT Rời 600V, 5A trong TO-252 Bourns BIDD05N60T

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Pd - Power Dissipation: 82 W

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 10 A

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 10 A