Điốt Schottky Carbide Silicon 650V 6A Điốt SiC chịu dòng xung cao trong TO252 Bourns BSDD06G65E2

Technology: SiC

Configuration: Single

Mounting Style: SMD/SMT

If - Forward Current: 6 A

Ir - Reverse Current: 300 nA

Vf - Forward Voltage: 1.45 V

Vr - Reverse Voltage: 650 V

Pd - Power Dissipation: 85.7 W

Ifsm - Forward Surge Current: 36 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Vrrm - Repetitive Reverse Voltage: 650 V