BJTs - Transistor Lưỡng Cực PNP -25V -500mA SỐ LƯỢNG LỚN HFE/300 Central Semiconductor 2N3702 PBFREE

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 360 mW

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 200 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 25 V

Collector-Emitter Saturation Voltage: 250 mV