MOSFET Central Semiconductor CEDM7001VL TR PBFREE

Vgs(th): 0.9V

Vgs (Max): 10V

Gate Charge (Qg): 0.57nC

Power consumption: 100mW

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 100mA

Input Capacitance (Ciss): 9pF

Operating temperature range: -65 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 3Ohm

Drive Voltage (Max Rds On, Min Rds On): 1.5|4V