MOSFET N-CH 60VDS 20VGS 340mA SOT-363 Comchip Technology 2N7002KDW-HF

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 30 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 150 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 15 ns

Id - Continuous Drain Current: 340 mA

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 5 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V