Transistor lưỡng cực (BJT) công suất 300mW +/-600mA Diodes Incorporated DMB2227A-7

Width: 1.6 mm

Height: 1.1 mm

Length: 3 mm

Technology: Si

Unit Weight: 15 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 300 mW

Gain Bandwidth Product fT: 300 MHz, 200 MHz

Emitter- Base Voltage VEBO: 6 V, 5 V

Collector- Base Voltage VCBO: 75 V, 60 V

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 35

Collector- Emitter Voltage VCEO Max: 40 V, 60 V

Collector-Emitter Saturation Voltage: 1 V, 2.6 V