MOSFET MOSFET BVDSS: 8V-24V Diodes Incorporated DMC1018UPD-13

Technology: Si

Unit Weight: 116 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 30.4 nC, 8.6 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 2.3 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V, - 12 V, + 12 V

Id - Continuous Drain Current: 9.5 A, 6.9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 17 mOhms, 32 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V, 20 V

Vgs th - Gate-Source Threshold Voltage: 600 mV, 1.5 V