MOSFET MOSFETBVDSS: 8V-24V Diodes Incorporated DMC21D1UDA-7B

Fall Time: 12 ns, 15.4 ns

Rise Time: 3.4 ns, 4.3 ns

Technology: Si

Unit Weight: 1 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 410 pC, 400 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 300 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 4.5 ns, 5.2 ns

Typical Turn-Off Delay Time: 24 ns, 31 ns

Id - Continuous Drain Current: 455 mA, 328 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 500 mOhms, 1.2 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 400 mV, 1 V