MOSFET MOSFET BVDSS: 25V-30V Diodes Incorporated DMC3025LSDQ-13

Fall Time: 5.8 ns, 12.4 ns

Rise Time: 4.2 ns, 4.9 ns

Technology: Si

Unit Weight: 750 mg

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 9.8 nC, 10.5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 1.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 3.9 ns, 6.8 ns

Typical Turn-Off Delay Time: 16.6 ns, 28.4 ns

Id - Continuous Drain Current: 8.5 A, 5.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 8 S, 5 S

Rds On - Drain-Source Resistance: 20 mOhms, 45 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V, 2 V