MOSFET Điện áp Dẫn Bão hòa BVDSS Diodes Incorporated DMG1026UVQ-7

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 450 fC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 580 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 440 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.8 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 500 mV