MOSFET MOSFET BVDSS: 31V-40V Diodes Incorporated DMG4822SSDQ-13

Fall Time: 3.1 ns

Rise Time: 7.9 ns

Technology: Si

Unit Weight: 750 mg

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 10.5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.42 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 2.9 ns

Typical Turn-Off Delay Time: 14.6 ns

Id - Continuous Drain Current: 10 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 20 mS

Rds On - Drain-Source Resistance: 21 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V