MOSFET N-Kênh 50Vds 20Vgs FET Chế Độ Tăng Cường 46pF 1.5Vgs Diodes Incorporated DMN53D0LDW-7

Fall Time: 11 ns, 11 ns

Rise Time: 2.5 ns, 2.5 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 600 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 310 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 2.7 ns, 2.7 ns

Typical Turn-Off Delay Time: 19 ns, 19 ns

Id - Continuous Drain Current: 360 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.6 Ohms

Vds - Drain-Source Breakdown Voltage: 50 V

Vgs th - Gate-Source Threshold Voltage: 800 mV