MOSFET đôi N-CH 30V Diodes Incorporated DMN63D8LDW-7

Fall Time: 6.3 ns

Rise Time: 3.2 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 870 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 400 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 3.3 ns

Typical Turn-Off Delay Time: 12 ns

Id - Continuous Drain Current: 260 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 80 mS

Rds On - Drain-Source Resistance: 2.8 Ohms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 800 mV