MOSFET 20V P-Kênh Tăng cường FET 10Vgss -80A Idm Diodes Incorporated DMP2010UFG-13

Fall Time: 110 ns

Rise Time: 30 ns

Technology: Si

Unit Weight: 30 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 103 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 900 mW

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 9.7 ns

Typical Turn-Off Delay Time: 235 ns

Id - Continuous Drain Current: 42 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 12.5 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 400 mV