BJTs - Transistor Lưỡng Cực TRANS LƯỠNG CỰC, NPN 160V, 600mA Diodes Incorporated DXT5551P5-13

Technology: Si

Unit Weight: 96 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 700 mW

Gain Bandwidth Product fT: 130 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 180 V

Continuous Collector Current: 600 mA

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 30 at 50 mA, 5 V

Collector- Emitter Voltage VCEO Max: 160 V

Collector-Emitter Saturation Voltage: 200 mV