BJT - Transistor lưỡng cực NPN 20V Lưỡng cực 1.5A Ic 380mw Diodes Incorporated ZXTN26020DMFTA

Technology: Si

Unit Weight: 9 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 1000 at 100 mA, 2 V

Gain Bandwidth Product fT: 260 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 20 V

Maximum DC Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 300 at 100 mA, 2 V

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 290 mV