BJTs - Transistor Lưỡng Cực PNP 150V 0.6A Diodes Incorporated ZXTP5401FLTA

Width: 1.4 mm

Height: 1.02 mm

Length: 3.04 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 310 mW

DC Current Gain hFE Max: 50 at 1 mA, 5 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 160 V

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 50 at 1 mA, 5 V, 60 at 10 mA, 5 V, 50 at 50 mA, 5 V

Collector- Emitter Voltage VCEO Max: 150 V

Collector-Emitter Saturation Voltage: 70 mV