BJT - Transistor Lưỡng Cực BJT, SOT-23, 80V, 2500mA, NPN Diotec Semiconductor 2SCR544R

Unit Weight: 39 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 250

Gain Bandwidth Product fT: 280 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 80 V

Maximum DC Collector Current: 2.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 300 mV