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Technology: Si
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 500 mW
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Id - Continuous Drain Current: 80 mA
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 3 MOhms
Vds - Drain-Source Breakdown Voltage: 10.6 V
Vgs th - Gate-Source Threshold Voltage: 3.02 V
