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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 117 W
DC Current Gain hFE Max: 70 at 3 A, 4 V
Gain Bandwidth Product fT: 80 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 160 V
Continuous Collector Current: 10 A
Maximum DC Collector Current: 15 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 12 at 2 A, 4 V
Collector- Emitter Voltage VCEO Max: 140 V
Collector-Emitter Saturation Voltage: 5 V
