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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
DC Current Gain hFE Max: 150 at 250 mA, 1 V
Gain Bandwidth Product fT: 3 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 60 V
DC Collector/Base Gain hfe Min: 30 at 250 mA, 1 V
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 600 mV
