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Technology: Si
Unit Weight: 4 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 1 W
DC Current Gain hFE Max: 100 at 1.6 A, 2 V
Gain Bandwidth Product fT: 1 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 65 V
Maximum DC Collector Current: 3.5 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 20 at 1.6 A, 2 V
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 1 V
