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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 50 W
DC Current Gain hFE Max: 100 at 1.5 A
Gain Bandwidth Product fT: 800 kHz
Collector- Base Voltage VCBO: 90 V
Continuous Collector Current: 4 A
DC Collector/Base Gain hfe Min: 25 at 1.5 A
Collector- Emitter Voltage VCEO Max: 80 V
Collector-Emitter Saturation Voltage: 500 mV
