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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
DC Current Gain hFE Max: 90
Gain Bandwidth Product fT: 50 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 100 V
DC Collector/Base Gain hfe Min: 30
Collector- Emitter Voltage VCEO Max: 100 V
Collector-Emitter Saturation Voltage: 2 V
