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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 400 mW
DC Current Gain hFE Max: 100 at 10 mA, 10 V
Gain Bandwidth Product fT: 5 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 180 V
Continuous Collector Current: 100 mA
Maximum Operating Temperature: + 175 C
DC Collector/Base Gain hfe Min: 50 at 10 mA, 10 V
Collector- Emitter Voltage VCEO Max: 180 V
Collector-Emitter Saturation Voltage: 300 mV
