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Fall Time: 12 us
Rise Time: 6.2 us
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 8.8 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.5 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 1.1 us
Typical Turn-Off Delay Time: 14 us
Id - Continuous Drain Current: 8 A
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 1 S
Rds On - Drain-Source Resistance: 18 mOhms
Vds - Drain-Source Breakdown Voltage: 15 V
Vgs th - Gate-Source Threshold Voltage: 1.3 V
