Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Fall Time: 4.3 ns, 6.5 ns
Rise Time: 1.4 ns, 2.7 ns
Technology: Si
Unit Weight: 8 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 900 pC, 24.5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.3 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 2.5 ns, 1.2 ns
Typical Turn-Off Delay Time: 5.7 ns, 9.8 ns
Id - Continuous Drain Current: 500 mA, 3.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 4 Ohms, 100 mOhms
Vds - Drain-Source Breakdown Voltage: 25 V, 12 V
Vgs th - Gate-Source Threshold Voltage: 650 mV, 350 mV
