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Width: 1.3 mm
Height: 1.2 mm
Length: 2.9 mm
Fall Time: 8.5 ns
Rise Time: 8.5 ns
Technology: Si
Unit Weight: 8 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 2.3 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 350 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 3 ns
Typical Turn-Off Delay Time: 17 ns
Id - Continuous Drain Current: 680 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 1.45 S
Rds On - Drain-Source Resistance: 450 mOhms
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs th - Gate-Source Threshold Voltage: 650 mV
