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Width: 5.31 mm
Height: 26.59 mm
Length: 20.29 mm
Fall Time: 50 ns
Rise Time: 85 ns
Technology: Si
Unit Weight: 10 g
Channel Mode: Enhancement
Mounting Style: Through Hole
Qg - Gate Charge: 740 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 1.04 kW
Vgs - Gate-Source Voltage: - 15 V, + 15 V
Typical Turn-On Delay Time: 90 ns
Typical Turn-Off Delay Time: 200 ns
Id - Continuous Drain Current: 120 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 85 S
Rds On - Drain-Source Resistance: 30 mOhms
Vds - Drain-Source Breakdown Voltage: 200 V
Vgs th - Gate-Source Threshold Voltage: 4.5 V
