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Technology: Si
Unit Weight: 73 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 400 mW
Gate-Source Cutoff Voltage: 6 mV
Maximum Drain Gate Voltage: 10 V
Drain-Source Current at Vgs=0: 12 mA
Id - Continuous Drain Current: 2 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 8 mS
Vgs - Gate-Source Breakdown Voltage: - 40 V
Vds - Drain-Source Breakdown Voltage: 40 V
