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Technology: Si
Unit Weight: 3 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 800 mW
DC Current Gain hFE Max: 325 at 1 mA, 10 V
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 75 V
Maximum DC Collector Current: 800 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 50 at 100 uA, 10 V
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 300 mV
