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Technology: Si
Unit Weight: 4.675 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 1 W
DC Current Gain hFE Max: 200 at 1 A, 5 VDC
Emitter- Base Voltage VEBO: 10 V
Collector- Base Voltage VCBO: 100 V
Maximum DC Collector Current: 10 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 50 at 1 A, 5 VDC
Collector- Emitter Voltage VCEO Max: 70 V
Collector-Emitter Saturation Voltage: 600 mV
