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Fall Time: 67 ns
Rise Time: 74 ns
Technology: SiC
Configuration: Dual
Mounting Style: Screw Mount
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.031 kW
Vgs - Gate-Source Voltage: - 10 V, + 23 V
Typical Turn-On Delay Time: 66 ns
Typical Turn-Off Delay Time: 166 ns
Id - Continuous Drain Current: 495 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 5.2 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 1.8 V
