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Vgs(th): 3 V
Vgs (Max): +25|-10V
Gate Charge (Qg): 130nC
Power consumption: 273W
Technology System: SiCFET(Silicon Carbide)
Drain to Source voltage: 1200V
Continuous drain current: 41A
Input Capacitance (Ciss): 2560pF
Operating temperature range: -55 to 175C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 100mOhm
Drive Voltage (Max Rds On, Min Rds On): 20V
