Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Width: 1.5 mm
Height: 1.1 mm
Length: 2.9 mm
Technology: Si
Unit Weight: 11.780 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Bipolar Power
Operating Frequency: 5.5 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 200 mW
DC Current Gain hFE Max: 180
Gain Bandwidth Product fT: 4.5 GHz
Emitter- Base Voltage VEBO: 3 V
Operating Temperature Range: + 25 C to + 150 C
Collector- Base Voltage VCBO: 20 V
Continuous Collector Current: 5 mA
Maximum DC Collector Current: 70 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: + 25 C
DC Collector/Base Gain hfe Min: 100
Collector- Emitter Voltage VCEO Max: 10 V
