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Fall Time: 460 nS
Rise Time: 650 nS
Technology: Si
Unit Weight: 4 g
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 250 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 90 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 80 nS
Typical Turn-Off Delay Time: 780 nS
Id - Continuous Drain Current: 100 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 6.5 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
