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Technology: Si
Unit Weight: 8.110 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 1 W
DC Current Gain hFE Max: 560
Gain Bandwidth Product fT: 420 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 80 V
Continuous Collector Current: 200 mA
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 200
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 130 mV
