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Technology: Si
Unit Weight: 72 mg
Configuration: Dual
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 653 mW
DC Current Gain hFE Max: 230
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 6 V, 7 V
Collector- Base Voltage VCBO: 40 V
Continuous Collector Current: 3 A
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 150
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 82 mV, 135 mV
