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Width: 4 mm
Height: 1.5 mm
Length: 5 mm
Fall Time: 110 ns, 125 ns
Rise Time: 40 ns, 100 ns
Technology: Si
Unit Weight: 74 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 48 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 2.5 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 25 ns
Typical Turn-Off Delay Time: 100 ns, 110 ns
Id - Continuous Drain Current: 8.8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 30 S
Rds On - Drain-Source Resistance: 20 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
