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Width: 9.15 mm
Height: mm
Length: 10 mm
Fall Time: 140 ns
Rise Time: 10 ns
Technology: Si
Unit Weight: 4 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 55 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 56 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 8 ns
Typical Turn-Off Delay Time: 250 ns
Id - Continuous Drain Current: 36 A
Maximum Operating Temperature: + 175 C
Forward Transconductance - Min: 12 S
Rds On - Drain-Source Resistance: 17 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
