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ROHM Semiconductor S2301USCZSAGG N-channel SiC power MOSFET | EMIN.VN

Discrete & Power Modules
ROHM Semiconductor S2301USCZSAGG N-channel SiC power MOSFET

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ROHM Semiconductor S2301USCZSAGG N-channel SiC power MOSFET

ManufacturerROHM Semiconductor(View more products from this manufacturer)

ModelS2301USCZSAGG

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Channel Type: N Channel

Transistor Case Style: DIE

Drain Source Voltage Vds: 1.2

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 40

Mosfet Module Configuration: Single

Drain Source On State Resistance: 111

Gate Source Threshold Voltage Max: 4

Datasheet

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