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Fall Time: 5.5 ns, 30 ns
Rise Time: 5.9 ns, 36 ns
Technology: Si
Unit Weight: 771.020 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 4 nC, 6.5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 2 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 7.8 ns, 9 ns
Typical Turn-Off Delay Time: 24 ns, 50 ns
Id - Continuous Drain Current: 5.5 A, 5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3.1 S, 4.1 S
Rds On - Drain-Source Resistance: 42 mOhms, 59 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
